%0 Journal Article
%T Dopant Implantation into the Silicon Substrate with Non-Planar Surface
%A Gennady A. Tarnavsky
%A Evgenii V. Vorozhtsov
%J Energy and Power Engineering
%P 73-77
%@ 1947-3818
%D 2010
%I Scientific Research Publishing
%R 10.4236/epe.2010.22011
%X The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.
%K Computer Modeling
%K Silicon Doping
%K Implantation
%K Donor
%K Acceptor Dopants
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=1821