%0 Journal Article
%T Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
%A Hao Wu
%A Jie Jiang
%J Mathematics
%D 2011
%I arXiv
%X In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.
%U http://arxiv.org/abs/1108.5844v2