%0 Journal Article
%T N-VSi-related center in non-irradiated 6H SiC nanostructure
%A Nikolay Bagraev
%A Eduard Danilovskii
%A Dmitrii Gets
%A Ekaterina Kalabukhova
%A Leonid Klyachkin
%A Anna Malyarenko
%A Dariya Savchenko
%A Bella Shanina
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4865645
%X We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the {\delta}-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the {\delta}-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the 14N nucleus allow us to attribute this triplet center to the N-VSi defect.
%U http://arxiv.org/abs/1308.5073v1