%0 Journal Article
%T Trap-assisted space charge limited transport in short channel MoS2 transistor
%A Subhamoy Ghatak
%A Arindam Ghosh
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4821185
%X We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.
%U http://arxiv.org/abs/1308.4858v1