%0 Journal Article
%T Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots
%A Lei Zhang
%A Chu-Hsiang Teng
%A Tyler A. Hill
%A Leung-Kway Lee
%A Pei-Cheng Ku
%A Hui Deng
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4830000
%X Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.
%U http://arxiv.org/abs/1308.5908v2