%0 Journal Article
%T Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells
%A Silke L. Diedenhofen
%A Grzegorz Grzela
%A Erik Haverkamp
%A Gerard Bauhuis
%A John Schermer
%A Jaime G¨Žmez Rivas
%J Physics
%D 2012
%I arXiv
%R 10.1016/j.solmat.2012.02.022
%X We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF2/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9 % when the solar cell is coated with a graded refractive index layer with a thickness of 1\mu m. We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.
%U http://arxiv.org/abs/1210.6601v1