%0 Journal Article
%T Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
%A Jun Z. Huang
%A Lining Zhang
%A Pengyu Long
%A Michael Povolotskyi
%A Gerhard Klimeck
%J Physics
%D 2015
%I arXiv
%X III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Their 3D quantum transport study using non-equilibrium Green's function method is computationally very intensive, in particular when combined with multiband approaches such as the eight-band K.P method. To reduce the numerical cost, an efficient reduced-order method is developed in this article and applied to study homojunction InAs and heterojunction GaSb-InAs nanowire TFETs. Device performances are obtained for various channel widths, channel lengths, crystal orientations, doping densities, source pocket lengths, and strain conditions.
%U http://arxiv.org/abs/1511.02516v1