%0 Journal Article
%T Nano-scale strain engineering of graphene and graphene-based devices
%A N. -C. Yeh
%A C. -C. Hsu
%A M. L. Teague
%A J. -Q. Wang
%A D. A. Boyd
%A C. -C. Chen
%J Physics
%D 2015
%I arXiv
%X Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nanoscale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.
%U http://arxiv.org/abs/1511.07631v1