%0 Journal Article
%T Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
%A Sanyam Bajaj
%A Fatih Akyol
%A Sriram Krishnamoorthy
%A Ting-Hsiang Hung
%A Siddharth Rajan
%J Physics
%D 2015
%I arXiv
%X A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.
%U http://arxiv.org/abs/1511.04438v1