%0 Journal Article
%T Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In$_{1-x}$Fe$_x$)$_2$O$_3$
%A R. J. Green
%A T. Z. Regier
%A B. Leedahl
%A J. A. McLeod
%A X. H. Xu
%A G. S. Chang
%A E. Z. Kurmaev
%A A. Moewes
%J Physics
%D 2015
%I arXiv
%R 10.1103/PhysRevLett.115.167401
%X Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In$_2$O$_3$ films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.
%U http://arxiv.org/abs/1510.05030v1