%0 Journal Article
%T Field-free magnetization reversal by spin-Hall effect and exchange bias
%A Arno van den Brink
%A Guus Vermijs
%A Aur¨Ślie Solignac
%A Jungwoo Koo
%A Jurgen T. Kohlhepp
%A Henk J. M. Swagten
%A Bert Koopmans
%J Physics
%D 2015
%I arXiv
%X Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient perpendicular magnetic anisotropy (PMA) devices. A promising alternative switching mechanism employs spin-orbit torques and the spin-Hall effect (SHE) in particular, but additional symmetry breaking is required to achieve deterministic switching in PMA devices. Currently used methods rely on in-plane magnetic fields or anisotropy gradients, which are not suitable for practical applications. Here, we interface the magnetic layer with an anti-ferromagnetic material. An in-plane exchange bias (EB) is created, and shown to enable field-free SHE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface.
%U http://arxiv.org/abs/1509.08752v2