%0 Journal Article
%T Tight-binding study of interface states in semiconductor heterojunctions
%A A. V. Kolesnikov
%A R. Lipperheide
%A U. Wille
%J Physics
%D 2001
%I arXiv
%R 10.1103/PhysRevB.63.205322
%X Localized interface states in abrupt semiconductor heterojunctions are studied within a tight-binding model. The intention is to provide a microscopic foundation for the results of similar studies which were based upon the two-band model within the envelope function approximation. In a two-dimensional description, the tight-binding Hamiltonian is constructed such that the Dirac-like bulk spectrum of the two-band model is recovered in the continuum limit. Localized states in heterojunctions are shown to occur under conditions equivalent to those of the two-band model. In particular, shallow interface states are identified in non-inverted junctions with intersecting bulk dispersion curves. As a specific example, the GaSb-AlSb heterojunction is considered. The matching conditions of the envelope function approximation are analyzed within the tight-binding description.
%U http://arxiv.org/abs/cond-mat/0102128v2