%0 Journal Article
%T Transforming a Surface State of Topological Insulator by a Bi Capping Layer
%A Han Woong Yeom
%A Sung Hwan Kim
%A Woo Jong Shin
%A Kyung-Hwan Jin
%A Joonbum Park
%A Tae-Hwan Kim
%A Jun Sung Kim
%A Hirotaka Ishikawa
%A Kazuyuki Sakamoto
%A Seung-Hoon Jhi
%J Physics
%D 2014
%I arXiv
%R 10.1103/PhysRevB.90.235401
%X We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
%U http://arxiv.org/abs/1411.4560v1