%0 Journal Article
%T Quantum Hall Effect in Hydrogenated Graphene
%A J. Guillemette
%A S. S. Sabri
%A B. Wu
%A K. Bennaceur
%A P. E. Gaskell
%A M. Savard
%A P. L. L¨¦vesque
%A F. Mahvash
%A A. Guermoune
%A M. Siaj
%A R. Martel
%A T. Szkopek
%A G. Gervais
%J Physics
%D 2013
%I arXiv
%R 10.1103/PhysRevLett.110.176801
%X The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}\lambda)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
%U http://arxiv.org/abs/1301.1257v1