%0 Journal Article
%T A tunable, dual mode field-effect or single electron transistor
%A Beno£¿t Roche
%A Benoit Voisin
%A Xavier Jehl
%A Romain Wacquez
%A Marc Sanquer
%A Maud Vinet
%A Veeresh Deshpande
%A Bernard Previtali
%J Physics
%D 2012
%I arXiv
%R 10.1063/1.3678042
%X A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
%U http://arxiv.org/abs/1201.3760v1