%0 Journal Article
%T Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels
%A J. Khan
%A C. M. Nolen
%A D. Teweldebrhan
%A D. Wickramaratne
%A R. K. Lake
%A A. A. Balandin
%J Physics
%D 2012
%I arXiv
%R 10.1063/1.3679679
%X We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.
%U http://arxiv.org/abs/1201.1526v1