%0 Journal Article
%T Superconductivity induced by electron doping in the system La1-xMxOBiS2 (M = Ti, Zr, Hf, Th)
%A D. Yazici
%A K. Huang
%A B. D. White
%A I. Jeon
%A V. W. Burnett
%A A. J. Friedman
%A I. K. Lum
%A M. Nallaiyan
%A S. Spagna
%A M. B. Maple
%J Physics
%D 2013
%I arXiv
%R 10.1103/PhysRevB.87.174512
%X We report a strategy to induce superconductivity in the BiS$_2$-based compound LaOBiS$_2$. Instead of substituting F for O, we increase the charge-carrier density (electron dope) via substitution of tetravalent Th$^{+4}$, Hf$^{+4}$, Zr$^{+4}$, and Ti$^{+4}$ for trivalent La$^{+3}$. It is found that both the LaOBiS$_2$ and ThOBiS$_2$ parent compounds are bad metals and that superconductivity is induced by electron doping with \emph{T$_c$} values of up to 2.85 K. The superconducting and normal states were characterized by electrical resistivity, magnetic susceptibility, and heat capacity measurements. We also demonstrate that reducing the charge-carrier density (hole doping) via substitution of divalent Sr$^{+2}$ for La$^{+3}$ does not induce superconductivity.
%U http://arxiv.org/abs/1303.6216v1