%0 Journal Article
%T High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
%A Wenzhong Bao
%A Xinghan Cai
%A Dohun Kim
%A Karthik Sridhara
%A Michael S. Fuhrer
%J Physics
%D 2012
%I arXiv
%R 10.1063/1.4789365
%X We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ~50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
%U http://arxiv.org/abs/1212.6292v1