%0 Journal Article
%T Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer
%A A. A. Lebedev
%A N. V. Agrinskaya
%A V. A. Beresovets
%A V. I. Kozub
%A S. P. Lebedev
%A A. A. Sitnikova
%J Physics
%D 2012
%I arXiv
%X Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.
%U http://arxiv.org/abs/1212.4272v1