%0 Journal Article
%T Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
%A T. Maassen
%A J. J. van den Berg
%A N. IJbema
%A F. Fromm
%A T. Seyller
%A R. Yakimova
%A B. J. van Wees
%J Physics
%D 2012
%I arXiv
%R 10.1021/nl2042497
%X We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.
%U http://arxiv.org/abs/1202.3016v1