%0 Journal Article
%T Room-Temperature Silicon Band-Edge Photoluminescence Enhanced by Spin-Coated Sol-Gel Films
%A Sufian Abedrabbo
%A Bashar Lahlouh
%A Sudhakar Shet
%A Anthony Fiory
%J Physics
%D 2012
%I arXiv
%R 10.1016/j.scriptamat.2011.07.025
%X Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13 micron) and vacuum annealed; the strongest emission was obtained at ~700 degrees C. Comparative study of annealing behavior indicates two-orders of magnitude efficiency enhancement. Emission from Er+3 ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel-films are discussed.
%U http://arxiv.org/abs/1202.0575v1