%0 Journal Article
%T Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
%A A. P. Higginbotham
%A T. W. Larsen
%A J. Yao
%A H. Yan
%A C. M. Lieber
%A C. M. Marcus
%A F. Kuemmeth
%J Physics
%D 2014
%I arXiv
%R 10.1021/nl501242b
%X Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
%U http://arxiv.org/abs/1403.2093v2