%0 Journal Article
%T Effect of anneal temperature on electrical and optical properties of SnS:Ag thin films
%A Hong-Jie Jia
%A Shu-Ying Cheng
%A Xin-Kun Wu
%A Yong-Li Yang
%J Natural Science
%P 197-200
%@ 2150-4105
%D 2010
%I Scientific Research Publishing
%R 10.4236/ns.2010.23030
%X SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300¡æ) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the£¨111£©direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260¡æ, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 ¡Á 1017 cm-3, and the resistivity was about 3.1 ¦¸cm.
%K Sns:Ag Films
%K Thermal Evaporation
%K Annealing
%K Electrical And Optical Properties
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=1566