%0 Journal Article
%T Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction
%A Saščl VšŠlez
%A David Ciudad
%A Joshua Island
%A Michele Buscema
%A Oihana Txoperena
%A Subir Parui
%A Gary A. Steele
%A Fššlix Casanova
%A Herre S. J. van der Zant
%A Andres Castellanos-Gomez
%A Luis E. Hueso
%J Physics
%D 2015
%I arXiv
%R 10.1039/c5nr04083c
%X The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~ 11 %. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7 %. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.
%U http://arxiv.org/abs/1512.04484v1