%0 Journal Article
%T Engineered Mott ground state in LaTiO$_{3+¦Ä}$/LaNiO$_3$ heterostructure
%A Yanwei Cao
%A Xiaoran Liu
%A M. Kareev
%A D. Choudhury
%A S. Middey
%A D. Meyers
%A J. -W. Kim
%A P. Ryan
%A J. W. Freeland
%A J. Chakhalian
%J Physics
%D 2015
%I arXiv
%X In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging after interfacial charge-transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of correlated metal LaNiO$_3$ and doped Mott insulator LaTiO$_{3+\delta}$, and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge-transfer from Ti to Ni sites giving rise to an insulating ground state with orbital polarization and $e_\textrm{g}$ orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.
%U http://arxiv.org/abs/1502.06920v3