%0 Journal Article
%T Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain
%A Lianfeng Zhao
%A Zhen Tan
%A Jing Wang
%A Jun Xu
%J Physics
%D 2014
%I arXiv
%X GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.
%U http://arxiv.org/abs/1402.5598v1