%0 Journal Article
%T Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts
%A Yexin Deng
%A Nathan J. Conrad
%A Zhe Luo
%A Han Liu
%A Xianfan Xu
%A Peide D. Ye
%J Physics
%D 2015
%I arXiv
%R 10.1109/IEDM.2014.7046987
%X The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher metal work functions lead to larger output hole currents in p-type transistors, while ambipolar characteristics can be observed with lower work function metals. Photodetectors with record high photoresponsivity (223 mA/W) are demonstrated on black phosphorus through contact-engineering.
%U http://arxiv.org/abs/1503.07392v1