%0 Journal Article
%T Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
%A D. Tomer
%A S. Rajput
%A L. J. Hudy
%A C. H. Li
%A L. Li
%J Physics
%D 2015
%I arXiv
%R 10.1063/1.4919727
%X Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields.
%U http://arxiv.org/abs/1503.08738v1