%0 Journal Article
%T Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface
%A A. F¨ēte
%A C. Cancellieri
%A D. Li
%A D. Stornaiuolo
%A A. D. Caviglia
%A S. Gariglio
%A J. -M. Triscone
%J Physics
%D 2015
%I arXiv
%R 10.1063/1.4907676
%X We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900{\deg}C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.
%U http://arxiv.org/abs/1503.05906v1