%0 Journal Article
%T Reply to "Comment on `Floquet Fractional Chern Insulators'"
%A Adolfo G. Grushin
%A ¨˘lvaro G¨®mez-Le¨®n
%A Titus Neupert
%J Physics
%D 2015
%I arXiv
%X We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.
%U http://arxiv.org/abs/1503.02580v1