%0 Journal Article
%T Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
%A Deep Jariwala
%A Vinod K. Sangwan
%A Jung-Woo Ted Seo
%A Weichao Xu
%A Jeremy Smith
%A Chris H. Kim
%A Lincoln J. Lauhon
%A Tobin J. Marks
%A Mark C. Hersam
%J Physics
%D 2014
%I arXiv
%R 10.1021/nl5037484
%X The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.
%U http://arxiv.org/abs/1412.4304v1