%0 Journal Article
%T Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures
%A Stefano Frabboni
%A Vincenzo Grillo
%A Gian Carlo Gazzadi
%A Roberto Balboni
%A Rinaldo Trotta
%A Antonio Polimeni
%A Mario Capizzi
%A Faustino Martelli
%A Silvia Rubini
%A Giulio Guzzinati
%A Frank Glas
%J Physics
%D 2014
%I arXiv
%R 10.1063/1.4752464
%X Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
%U http://arxiv.org/abs/1410.2436v1