%0 Journal Article
%T Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
%A M. Yu. Melnikov
%A A. A. Shashkin
%A V. T. Dolgopolov
%A S. -H. Huang
%A C. W. Liu
%A S. V. Kravchenko
%J Physics
%D 2014
%I arXiv
%R 10.1063/1.4914007
%X We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
%U http://arxiv.org/abs/1410.6019v2