%0 Journal Article
%T Epitaxial Growth of VO$_{2}$ by Periodic Annealing
%A J. W. Tashman
%A J. H. Lee
%A H. Paik
%A J. A. Moyer
%A R. Misra
%A J. A. Mundy
%A T. Spila
%A T. A. Merz
%A J. Schubert
%A D. A. Muller
%A P. Schiffer
%A D. G. Schlom
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4864404
%X We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.
%U http://arxiv.org/abs/1310.5021v4