%0 Journal Article
%T Electrically driven spin resonance in silicon carbide color centers
%A P. V. Klimov
%A A. L. Falk
%A B. B. Buckley
%A D. D. Awschalom
%J Physics
%D 2013
%I arXiv
%R 10.1103/PhysRevLett.112.087601
%X We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-frequency electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.
%U http://arxiv.org/abs/1310.4844v1