%0 Journal Article
%T Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film
%A Yusheng Hou
%A Hongjun Xiang
%A Xingao Gong
%J Physics
%D 2013
%I arXiv
%R 10.1103/PhysRevB.89.064415
%X By combining genetic algorithm optimizations, first-principles calculations and the double-exchange model studies, we have unveiled that the exotic insulating ferromagnetism in LaMnO3 thin film originates from the previously unreported G-type d_{3z^2-r^2}/d_{x^2-y^2} orbital ordering. An insulating gap opens as a result of both the orbital ordering and the strong electron-phonon coupling. Therefore, there exist two strain induced phase transitions in the LaMnO3 thin film, from the insulating A-type antiferromagnetic phase to the insulating ferromagnetic phase and then to the metallic ferromagnetic phase. These phase transitions may be exploited in tunneling magnetoresistance and tunneling electroresistance related devices.
%U http://arxiv.org/abs/1310.3590v1