%0 Journal Article
%T Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
%A Murat Cubukcu
%A Olivier Boulle
%A Marc Drouard
%A Kevin Garello
%A Can Onur Avci
%A Ioan Mihai Miron
%A Juergen Langer
%A Berthold Ocker
%A Pietro Gambardella
%A Gilles Gaudin
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4863407
%X We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.
%U http://arxiv.org/abs/1310.8235v2