%0 Journal Article
%T Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO
%A Masahiko Matsubara
%A Mozhgan N. Amini
%A Rolando Saniz
%A Dirk Lamoen
%A Bart Partoens
%J Physics
%D 2012
%I arXiv
%R 10.1103/PhysRevB.86.165207
%X The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen.
%U http://arxiv.org/abs/1204.0364v1