%0 Journal Article
%T Step edge barriers on GaAs(001)
%A Pavel £¿milauer
%A Dimitri D. Vvedensky
%J Physics
%D 1993
%I arXiv
%R 10.1103/PhysRevB.48.17603
%X We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.
%U http://arxiv.org/abs/cond-mat/9311061v1