%0 Journal Article
%T Enhanced Ferroelectric Properties of Multilayer SBT-BTN Thin Films for NVRAM Applications
%A Oleksandr Khorkhordin
%A Chia-Pin Yeh
%A Bodo Kalkofen
%A Edmund Burte
%J Journal of Crystallization Process and Technology
%P 49-57
%@ 2161-7686
%D 2015
%I Scientific Research Publishing
%R 10.4236/jcpt.2015.54007
%X Ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-(Bi<sub>4</sub>Ti<sub>3</sub>)<sub>1-x</sub>Nb<sub>x</sub>O<sub>12</sub> (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO<sub>2</sub>/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C<sub>4</sub>H<sub>9</sub>)<sub>3</sub>], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)<sub>5</sub>(OC<sub>2</sub>H<sub>4</sub>OMe)]<sub>2</sub>], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)<sub>2</sub>(mmp)<sub>2</sub>] and Niob-ethoxide [Nb(OC<sub>2</sub>H<sub>5</sub>)<sub>5</sub>] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800<sup>o</sup>C consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (<img src=\"Edit_bce7d53e-c2b3-430e-ab08-b2fc2a05555d.jpg\" width=\"30\" alt=\"\" />) and coercive field (Ec) are 16.2 ¦ĚC/cm<sup>2</sup> and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (<img src=\"Edit_3decdc19-67e8-44c8-92ef-ff586c7196ce.jpg\" width=\"30\" alt=\"\" />&nbsp;= 6.4 ¦ĚC/cm<sup>2</sup>, Ec = 154 kV/cm). In the films prepared above 700<sup>o</sup>C, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.
%K Ferroelectric
%K SBT
%K BTN
%K MOCVD
%K Multilayer
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=60117