%0 Journal Article %T Drastic Resistivity Reduction of CVD-TiO2 Layers by Post-Wet-Treatment in HCl Solution %A Satoshi Yamauchi %A Kazuhiro Ishibashi %A Sakura Hatakeyama %J Journal of Crystallization Process and Technology %P 24-30 %@ 2161-7686 %D 2015 %I Scientific Research Publishing %R 10.4236/jcpt.2015.51004 %X Poly-crystalline anatase TiO2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF5 in H2-ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO2 layer. Resistivity of the as-deposited layer about 1 ЁС 10-1 ІИ·cm was drastically reduced to 3 ЁС 10-3 ІИ·cm by the wet-treatment using indium. Temperature dependence of the resistivity increased with temperature above 100 K for the wet-treated layer was quite different from that decreased above 100 K for the as-deposited layer, whereas the resistivity was saturated at lower temperatures. The resistivity at room-temperature was decreased with the thickness before the wet-treatment but independent on the thickness above 100 nm for the wet-treated layer. Indium was more effective for the resistivity reduction than gallium but aluminum was not useful for the treatment. As the results that the wet-treatment using indium was examined for the TiO2 layers deposited by various conditions, the optimum deposition condition to reduce the resistivity of the layer after the wet-treatment was clearly different from that for the as-deposited layer. %K LPCVD %K Poly-Crystalline TiO< %K sub> %K 2< %K /sub> %K Post Wet-Treatment %K Low Resistive TiO< %K sub> %K 2< %K /sub> %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=53296