%0 Journal Article
%T Programmable ferroelectric tunnel memristor
%A Andy Quindeau
%A Dietrich Hesse
%A Marin Alexe
%J Frontiers in Physics
%D 2014
%I Frontiers Media
%R 10.3389/fphy.2014.00007
%X We report a programmable analog memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr0.2Ti0.8)O3 film sandwiched between La0.7Sr0.3MnO3 and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10£¿7 s. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.
%K memristor
%K KAI
%K ferroelectric switching
%K ferroelectric tunnel junction
%K multiferroic oxides
%U http://www.frontiersin.org/Journal/10.3389/fphy.2014.00007/abstract