%0 Journal Article
%T Theoretical D* Optimization of N+-p Pb<sub>1-x</sub>Sn<sub>x</sub>Se Long-Wavelength (8 - 11 ¦Ìm) Photovoltaic Detector at 77 K
%A Binbin Weng
%A Jijun Qiu
%A Lihua Zhao
%A Caleb Chang
%A Zhisheng Shi
%J Detection
%P 1-6
%@ 2331-2084
%D 2014
%I Scientific Research Publishing
%R 10.4236/detection.2014.21001
%X In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant-
area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three
fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered.
Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity
(D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.
%K Pb&lt
%K sub&gt
%K 1-x&lt
%K /sub&gt
%K Sn&lt
%K sub&gt
%K x&lt
%K /sub&gt
%K Se
%K Lifetime
%K Resistant-Area Product
%K Quantum Efficiency
%K Detectivity
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=44328