%0 Journal Article
%T Surface Analysis of Etched Silicon
%A Arifullah &nbsp
%A Qadeer Hussain
%A Nazir A. Naz
%A Ammar Akbar
%A Akbar Ali
%J Journal of Surface Engineered Materials and Advanced Technology
%P 98-104
%@ 2161-489X
%D 2014
%I Scientific Research Publishing
%R 10.4236/jsemat.2014.42013
%X <p>
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	<span style=\"font-size:10pt;font-family:Verdana;\">P-type (100) oriented silicon
wafers were etched with vapors of concentrated Hydrofluoric acid in a reaction
chamber under continuous vapor-flow at standard temperature and pressure. The
surface morphology of the etched samples was examined by scanning electron
microscope and pore size analyzer. The radius of the pores and quantum dots
were found to be 6 nm and 4 nm respectively. Etched samples emitted red
luminescence when exposed to ultra violet (UV) light. The red luminescence
emitted by the etched surface has been assigned to energy states induced by quantum
confinement of holes.</span><span style=\"line-height:1.5;font-family:Verdana;\"></span> 
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%K Semiconductors
%K PS
%K SEM
%K TG/DTA
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=45463