%0 Journal Article
%T Synthesis of Ag/Ag<sub>2</sub>S Nanoclusters Resistive Switches for Memory Cells
%A Aleksey Nikolaevich Belov
%A Olga Veniaminovna Pyatilova
%A Maksim Igorevich Vorobiev
%J Advances in Nanoparticles
%P 1-4
%@ 2169-0529
%D 2014
%I Scientific Research Publishing
%R 10.4236/anp.2014.31001
%X <p align=\"justify\">
	<b><span><span style=\"font-family:Verdana;\">Resistive switching Ag/Ag</span><sub><span style=\"font-family:Verdana;\">2</span></sub><span style=\"font-family:Verdana;\">S nanoclusters were formed by sulphidation of melting</span></span></b><b><span style=\"font-family:Verdana;\">-</span><span style=\"font-family:Verdana;\">dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized by scanning (SEM)</span></b><b><span style=\"font-family:Verdana;\">,</span><span style=\"font-family:Verdana;\"> transmitting electron (TEM), scanning resistance microscopes (SRM) and Raman scattering. Hysteretic resistive switching behavior was observed in the samples that were studied with ON/OFF switching voltage equal to 8</span></b><b><span style=\"font-family:Verdana;\"> - </span><span style=\"font-family:Verdana;\">10</span></b><b><span> </span><span style=\"font-family:Verdana;\">V respectively. Simple empirical numerical simulation model, based on Deal-Grove model assumptions and mechanisms, for silver nanoclusters sulphidation process, was proposed</span></b><b><span style=\"font-family:Verdana;\">.</span></b> 
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%K Silver Sulphide Clusters
%K Memory Cells
%K Sulphidation
%K Deal-Grove Model
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=42714