%0 Journal Article
%T Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy
%A Dominik Lausch
%A Christian Hagendorf
%J Microscopy Research
%P 9-12
%@ 2329-3314
%D 2014
%I Scientific Research Publishing
%R 10.4236/mr.2014.21002
%X <p align=\"justify\">
	In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a ¦Ìm-scale.
</p>
%K Defect Luminescence
%K Recombination Active Defects
%K Silicon Solar Cells
%K Optical Microscopy
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=42292