%0 Journal Article
%T Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 ¦Ìm Optical Communication
%A Noureddine Sfina
%A Naima Yahyaoui
%A Moncef Said
%A Jean-Louis Lazzari
%J Modeling and Numerical Simulation of Material Science
%P 37-52
%@ 2164-5353
%D 2014
%I Scientific Research Publishing
%R 10.4236/mnsms.2014.41007
%X <div align=\"justify\">
	<span style=\"font-size:12px;\">In this paper, a p-i-n heterojunction based on strain-compensated Si/Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-x</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>x</sub></span><span style=\"font-size:12px;\">/Si multiple quantum wells on relaxed Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-y</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>y</sub></span><span style=\"font-size:12px;\"> is proposed for photodetection applications. The Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-y</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>y</sub></span><span style=\"font-size:12px;\">/Si/Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-x</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>x</sub></span><span style=\"font-size:12px;\">/Si/Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-y</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>y</sub></span><span style=\"font-size:12px;\"> stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 ¦Ìm. The electron transport in the Si/Si</span><span style=\"font-size:12px;line-height:115%;\"><sub>1-x</sub></span><span style=\"font-size:12px;\">Ge</span><span style=\"font-size:12px;line-height:115%;\"><sub>x</sub></span><span style=\"font-size:12px;\">/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (R</span><span style=\"font-size:12px;line-height:115%;\"><sub>o</sub></span><span style=\"font-size:12px;\">A) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.</span> 
</div>
%K Strained SiGe/Si Quantum Wells
%K Band Structure
%K Device Engineering
%K P-i-n Infrared Photodetectors
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=42129