%0 Journal Article
%T Ambient Zinc K-Edge Extended X-Ray Absorption Fine Structure Studies on Solid Solution Hardening of the Ternary Alloys
%A Shabina Khan
%A Javed Mazher
%A Pankaja Singh
%J ISRN Spectroscopy
%D 2013
%R 10.1155/2013/623409
%X Solid solution hardening can be introduced in the zinc selenide by cationic substitution alloying. We are presenting our studies on gradual development of the hardening and the bond-length variations among the heavily Be-doped ternary alloys of . These compositionally vivid ternary systems are grown by the Bridgman technique, and a set of careful measurements of synchrotron-based Zn core X-ray absorption spectroscopy are performed on the mixed alloy, which is followed by extraction of useful oscillations of extended X-ray absorption fine structures. A detailed ab initio analysis is also carried out for the mixed alloy¡¯s theoretical EXAFS simulations, and suitable data processing codes are used for the subsequent experimental spectra fittings. Various X-ray scattering single and multiple paths around the core atomic environ are simulated and compared with the spectroscopic results. With the aid of as-found parametric values, the hardening and crystalline disorders are discussed and explained in the midst of the multimodal bond-length behaviors and changes induced by the increased alloying amid as-found pseudocrystalline stabilities. 1. Introduction Group II¨CVI wide band gap semiconductors are suitable for both long and short wavelength optical devices like tunable blue semiconductor lasers, nanotransistors, and ultrahigh speed and high energy switching devices [1, 2]. Among these semiconductors, the zinc selenide (ZnSe) is highly suitable for deployment in the blue green lasers [3¨C5]. The ZnSe is a wide band gap semiconductor material and the aptness of the ZnSe mainly lies in its so-called self-activated emission band that is centered at 2.07£¿eV with the sharp luminescence emission lines owing to its high crystal quality and inherent strain reduction property [1]. Fabrication of the ZnSe laser diode requires high levels of n- and p-type doping in order to obtain the appropriate electrical properties [4]. However, the presence of impurities produces defects mainly from optically active centers, which largely affect any competent luminescence emission. Therefore, early studies of lasing in the ZnSe are limited because the material is not stable enough to be used in high current or in high excitation regimes [1]. Generation of various point defects in the active region of ZnSe and propagation of the extended defects that mainly originate at interface between the ZnSe and GaAs under working device conditions are some protracted hampering issues in the zinc selenide¡¯s commercial deployment [6]. The formation and the propagation of nonradiative defects are
%U http://www.hindawi.com/journals/isrn.spectroscopy/2013/623409/