%0 Journal Article
%T Excitation Kinetics of Impurity Doped Quantum Dot Triggered by Gaussian White Noise
%A Suvajit Pal
%A Sudarson Sekhar Sinha
%A Jayanta Ganguly
%A Manas Ghosh
%J ISRN Condensed Matter Physics
%D 2013
%R 10.1155/2013/798153
%X We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of Gaussian white noise. In view of a comprehensive research we have considered both additive and multiplicative noise (in Stratonovich sense). The noise strength and the dopant location have been found to fabricate the said kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be prominently different. The investigation reveals emergence of maximization and saturation in the excitation kinetics as a result of complex interplay between various parameters that affect the kinetics. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role. 1. Introduction Throughout last couple of decades we came across a tremendous surge in theoretical and experimental researches on impurity states of low-dimensional heterostructures [1]. Among these heterostructures, quantum dots (QDs) have been found to take some leading role undoubtedly. The importance of QD originates because of its emergence as the destination in the journey towards miniaturization of semiconductor devices. Furthermore, the properties of doped QDs have made them potential candidates for scientific study and technological applications. With QD, the subtle interplay between new confinement sources and impurity potentials has opened up new areas of research in this field [2]. Under the confinement, the dopant location can tailor the electronic and optical properties of the system [3]. This resulted in a rich literature comprising of theoretical studies on impurity states [4¨C7] in general, and also on their optoelectronic properties, in particular, for a wide range of semiconductor devices [3, 8¨C15]. The widespread research trend elegantly explores new physics and indicates profound technological impact simultaneously. As a natural extension of the trend, dynamical aspects of doped QD have also been extensively studied. Out of them researches on excitation of strongly confined electron merit importance because of the crucial role played by the said phenomenon in optoelectronic devices and as lasers. From the perspective of technological applications such excitation further involves optical encoding, multiplexing, and photovoltaic and light emitting devices. The phenomenon also plays some important role in the population transfer among the exciton states in QD [16]. Of late, we have performed some
%U http://www.hindawi.com/journals/isrn.cmp/2013/798153/