%0 Journal Article
%T Enhancement of Photon Absorption on Thin-Film Semiconductor Using Photonic Crystal
%A Abd. Wahidin Nuayi
%A Husin Alatas
%A Irzaman S. Husein
%A Mamat Rahmat
%J International Journal of Optics
%D 2014
%I Hindawi Publishing Corporation
%R 10.1155/2014/534145
%X Enhancement of photon absorption on barium strontium titanate ( ) thin-film semiconductor for mole fraction , 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500¡ãC for 15 hours with increasing rate of 1.6¡ãC/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity. 1. Introduction In solar cell technology, there are some materials that can be used as its base material. Three of them are CulnSe2 (or its alloys such as CulnS2 or CulnGaSe2), CdTe, and amorphous silicon materials. These materials only require one micron thickness to establish an efficient solar cells, due to their high light absorption [1¨C4]. However, CdTe and CulnSe2 have a bad impact on environment; namely, when the CdTe solar cells are on fire, this cadmium would cause harmful pollution. In laboratory scale, the CuInSe2 material has efficiency above 15%, but it is difficult to control its elements, especially when being produced in larger scale, which implies that it is difficult to produce the associated module even in a laboratory scale [1, 2]. In the mean time, for amorphous silicon material, the related solar cell has been produced in laboratory scale with efficency about 9.5% to 13% [2, 4¨C7]. There are several other important ferroelectric materials which were studied by many researchers such as PbTiO3, Pb ( )O3, SrBiTaO3, Pb(Mg1/3Nb2/3)O3, and BaTiO3 which is the basic of (Ba,Sr)TiO3 [8]. Due to its properties, BaSrTiO3 (or BST for short) is a material which has been intensively studied and developed. One of them is in the form of BST thin-film ferroelectric which is used and utilized in electronics such as for light sensor application that can be developed to make solar cells according to optical and electrical characteristics [9, 10]. BST thin film is a material with high dielectric constant, high degree of crystallinity (~800¡ãC), low leakage current, and resistance to high breakdown voltage at Curie¡¯s temperature, as well
%U http://www.hindawi.com/journals/ijo/2014/534145/